INVESTIGATION OF CHROMIUM, COBALT, AND NICKEL IMPLANTATION IN SILICON USING AUGER-ELECTRON SPECTROMETRY, SECONDARY ION MASS-SPECTROMETRY, RUTHERFORD BACKSCATTERING SPECTROMETRY, AND MONTE-CARLO SIMULATION

Silicon wafers were implanted with Cr-52, Co-59, and Ni-58 ions and investigated with regard to their possible quantification as well as their use as reference material for surface analysis. The kinetic energy of the ions was 300 keV, the dose range extended from 0.9 x 10(12) to 1.44 x 10(17) ions/cm2, and the implantation was carried out at room temperature. The implanatation profiles generated were investigated by Auger electron spectrometry (AES), secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectrometry (RBS) and were accompanied by Monte Carlo (MC) simulations. The positions of the profile maxima determined (195-275 nm, dependent on the specific ions and implantation dose) and the half-widths at half-maximum (ca. 85 nm) sufficiently agree in intercomparison, while the mole fractions at the maxima differ up to 60%. An adequate determination of the mole fraction is possible by RBS without any preconditions; SIMS and AES also offer this possibility only in such cases where implantation doses are known and used for quantification.