ELECTRICAL PROPERTIES OF N-TYPE CD1-XMGXTE

The Hall coefficient and resistivity of Al-doped and undoped Cd1-x Mgx Te mixed crystals (0≤x≤0.35) prepared by the Bridgeman-Stockbarger technique have been measured between 60° and 300°K. The experimental results were analysed in connection with the carrier concentration, x-dependence of the donor ionization energy, and electron mobility. The optical mode scattering mobility was calculated by assuming the dielectric constants, the energy of the optical phonons, and effective mass value extrapolated from the data of II-VI semiconductors. The ionization energy of the shallow donors can well be described by the hydrogenic model. It was made clear that the polar optical vibration and ionized impurity scattering contribute to the electron mobility, while the neutral impurity, dipole, and alloy scattering are negligible. © 1969, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.