PHOTODETACHMENT OF SF6-

被引：30

作者：

DATSKOS, PG ^{[1
]}

CARTER, JG ^{[1
]}

CHRISTOPHOROU, LG ^{[1
]}

机构：

[1] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37996

来源：

CHEMICAL PHYSICS LETTERS | 1995年 / 239卷 / 1-3期

关键词：

D O I：

10.1016/0009-2614(95)00417-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The photodetachment cross section for SF6- and the photodetachment threshold for this process have been accurately measured using a newly developed technique. The photodetachment cross section has a threshold at 3.16 eV which is about three times larger than the electron affinity of the SF, molecule. The magnitude of the photodetachment cross section increases monotonically from the threshold to 1.0 X 10(-18)cm(2) at a photon energy of 3.46 eV. The small size of the measured cross section is attributed to the large relaxation in the equilibrium internuclear positions of SF6- compared to SF6; the analysis of the data indicates that the photoejected electron has an angular momentum quantum number l = 1.

引用

页码：38 / 43

页数：6

共 26 条

[1] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J].