GAMMA-IRRADIATION OF SILICON .1. LEVELS IN N-TYPE MATERIAL CONTAINING OXYGEN

被引：44

作者：

SONDER, E

TEMPLETON, LC

机构：

来源：

关键词：

D O I：

10.1063/1.1735818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1279 / 1286

页数：8

共 14 条

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