IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON

[1] BEER, 1957, PHYS REV, V107, P1506

[2] HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1203 - 1205

[3] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 : 199 - 363

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[7] DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 486 - 489

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[10] HAM FS, 1955, PHYS REV, V100, P1251

[1] BEER, 1957, PHYS REV, V107, P1506

[2] HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1203 - 1205

[3] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 : 199 - 363

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[7] DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 486 - 489

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[10] HAM FS, 1955, PHYS REV, V100, P1251