MAGNETORESISTANCE OF UNDOPED N-TYPE GALLIUM ARSENIDE AT LOW TEMPERATURES

被引：52

作者：

HALBO, L

SLADEK, RJ

机构：

来源：

PHYSICAL REVIEW | 1968年 / 173卷 / 03期

关键词：

D O I：

10.1103/PhysRev.173.794

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：794 / &

共 41 条

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