STRAINED INGAASP MULTIQUANTUM WELLS FOR OPTICAL ELECTROABSORPTION WAVE-GUIDE MODULATORS

被引：11

作者：

SATO, K

WAKITA, K

YAMAMOTO, M

机构：

[1] Atsugi-shi

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

OPTICAL MODULATION; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum-confined Stark effect in strained InGaAsP multiquantum wells with InGaAsP barriers and its application to the optical electroabsorption waveguide modulator are described. A large spectral red shift of more than 450 angstrom is observed at a low applied voltage of 3 V. An extinction ratio of > 14 dB is demonstrated with a driving voltage as low as 5 V.

引用

收藏

页码：609 / 610

页数：2

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