DEEP LEVEL SPECTROSCOPY IN INP-FE

被引：41

作者：

BREMOND, G ^{[1
]}

NOUAILHAT, A ^{[1
]}

GUILLOT, G ^{[1
]}

COCKAYNE, B ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19810040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：55 / 56

页数：2

共 12 条

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[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646
[3] BREMOND G, UNPUBLISHED
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NICHOLAS, RJ
STRADLING, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155
[6] GRUSHKO NS, 1975, SOV PHYS SEMICOND+, V8, P1179
[7] CHARACTERIZATION OF DEFECTS PRODUCED IN PROTON-IRRADIATED GAAS BY ANALYSIS OF THERMAL AND OPTICAL CAPACITY TRANSITIONS
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VINCENT, G
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CHANTRE, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 679 - 686
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] MITZUNO O, 1975, ELECTRON LETT, V11, P118
[10] INTERACTION OF DEEP-LEVEL TRAPS WITH THE LOWEST AND UPPER CONDUCTION MINIMA IN INP
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 423 - 432