学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
SUB-THRESHOLD BEHAVIOR OF ESFI-SOS TRANSISTORS
被引:4
作者
:
KRANZER, D
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST PHYS ELEKTR,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST PHYS ELEKTR,A-1040 VIENNA,AUSTRIA
KRANZER, D
[
1
]
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST PHYS ELEKTR,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST PHYS ELEKTR,A-1040 VIENNA,AUSTRIA
FICHTNER, W
[
1
]
机构
:
[1]
VIENNA TECH UNIV,INST PHYS ELEKTR,A-1040 VIENNA,AUSTRIA
来源
:
ELECTRONICS LETTERS
|
1978年
/ 14卷
/ 06期
关键词
:
D O I
:
10.1049/el:19780107
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:161 / 162
页数:2
相关论文
共 5 条
[1]
FICHTNER W, UNPUBLISHED
[2]
KRANZER D, UNPUBLISHED
[3]
LOW-LEVEL CURRENTS IN ION-IMPLANTED MOSFET
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
MASUHARA, T
ETOH, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
ETOH, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(12)
: 799
-
807
[4]
SCHLOTTERER H, 1977, SILICON SAPPHIRE DEV
[5]
ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(02)
: 146
-
+
←
1
→
共 5 条
[1]
FICHTNER W, UNPUBLISHED
[2]
KRANZER D, UNPUBLISHED
[3]
LOW-LEVEL CURRENTS IN ION-IMPLANTED MOSFET
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
MASUHARA, T
ETOH, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI 185,TOKYO,JAPAN
ETOH, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(12)
: 799
-
807
[4]
SCHLOTTERER H, 1977, SILICON SAPPHIRE DEV
[5]
ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1972,
SC 7
(02)
: 146
-
+
←
1
→