LOW-LEVEL CURRENTS IN ION-IMPLANTED MOSFET

[1] AUBUCHON KG, 1969, JUN INT C US MIS STR

[2] BARRON MB, 1966, SOLID STATE ELECTRON, V9, P927

[3] INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1591 - +

[4] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[5] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 283 - 289

[6] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[7] HAYASHI Y, 1967, SSD676 IECE TECHN GR

[8] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[9] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[10] THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1319 - +

[1] AUBUCHON KG, 1969, JUN INT C US MIS STR

[2] BARRON MB, 1966, SOLID STATE ELECTRON, V9, P927

[3] INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1591 - +

[4] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[5] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 283 - 289

[6] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[7] HAYASHI Y, 1967, SSD676 IECE TECHN GR

[8] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[9] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[10] THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1319 - +