DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION

[1] AUBUCHON KG, 1969, P INT C PROPERTIES U, P575

[2] CHENEY GT, 1967, OCT INT EL DEV M WAS

[3] DEAL BE, 1965, J ELECTROCHEM SOC, V112, P300

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] SURFACE CHARGE AND SURFACE POTENTIAL IN ARBITRARILY DOPED CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 137 - 140

[6] MACDOUGALL J, 1970, ELECTRONICS-US, V43, P86

[7] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[8] Mayer J.W., 1970, ION IMPLANTATION SEM, P10

[9] REDDI VGK, 1968, IEEE T ELECTRON DEVI, VED15, P151

[10] Seidel T. E., 1971, Radiation Effects, V7, P1, DOI 10.1080/00337577108232558

[1] AUBUCHON KG, 1969, P INT C PROPERTIES U, P575

[2] CHENEY GT, 1967, OCT INT EL DEV M WAS

[3] DEAL BE, 1965, J ELECTROCHEM SOC, V112, P300

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] SURFACE CHARGE AND SURFACE POTENTIAL IN ARBITRARILY DOPED CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 137 - 140

[6] MACDOUGALL J, 1970, ELECTRONICS-US, V43, P86

[7] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[8] Mayer J.W., 1970, ION IMPLANTATION SEM, P10

[9] REDDI VGK, 1968, IEEE T ELECTRON DEVI, VED15, P151

[10] Seidel T. E., 1971, Radiation Effects, V7, P1, DOI 10.1080/00337577108232558