ZN-DIFFUSION-INDUCED DAMAGE IN INSB DIODES

[1] ELECTRON DENSITY DISTRIBUTION IN INDIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 774 - +

[2] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[3] Darwin CG, 1914, PHILOS MAG, V27, P675, DOI 10.1080/14786440408635139

[4] The theory of X-ray reflexion. [J]. PHILOSOPHICAL MAGAZINE, 1914, 27 (157-62) : 315 - 333

[5] INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) : 1229 - +

[6] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[7] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[8] James R. W., 1950, OPTICAL PRINCIPLES D

[9] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[10] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &

[1] ELECTRON DENSITY DISTRIBUTION IN INDIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 774 - +

[2] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[3] Darwin CG, 1914, PHILOS MAG, V27, P675, DOI 10.1080/14786440408635139

[4] The theory of X-ray reflexion. [J]. PHILOSOPHICAL MAGAZINE, 1914, 27 (157-62) : 315 - 333

[5] INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) : 1229 - +

[6] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[7] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[8] James R. W., 1950, OPTICAL PRINCIPLES D

[9] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[10] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &