PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS

被引：21

作者：

JUNGBLUT.ED

WANG, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 06期

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D O I：

10.1063/1.1714384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1967 / &

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