SINGLE QUANTUM-WELL EDGE EMITTING BROAD-BAND LED

被引：4

作者：

MANTZ, J

HAGER, H

CHAN, E

HONG, CS

机构：

[1] Boeing High Technology Center, Washington, PO Box 24969, M.S. 7J-05 Seattle

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Light emitting diodes; Semiconductor devices and materials;

D O I：

10.1049/el:19901157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a single quantum well structure in an effort to develop an edge emitting LED with an extremely broad spectral width has been studied. The device is unique in that it utilises the gain saturation effect in the quantum well structure to populate the quantised n = 2 sublevel of the quantum well. The resultant device has an extremely broad output spectral width of over 95 nm (FWHM) and emits 3-2 mW at a drive current of 200 mA. The distinctive step-like spectral response exhibits two levels which can be attributed to the quantised n = 1 and n = 2 sublevels of the 100 A single quantum well. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1807 / 1809

页数：3

共 3 条

[1] QUANTUM-WELL SUPERLUMINESCENT DIODE WITH VERY WIDE EMISSION-SPECTRUM [J].