KINETICS OF THERMAL-STRESS INDUCED VOID GROWTH IN NARROW ALUMINUM LINES

被引：4

作者：

BORGESEN, P

LEE, JK

PASZKIET, CA

LI, CY

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1-mu-m-wide Al lines were passivated at 300-degrees-C and annealed at 400-degrees-C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.

引用

页码：1341 / 1343

页数：3

共 8 条

[1]

Borgesen P., UNPUB

[2] MECHANISMS OF THERMAL-STRESS RELAXATION AND STRESS-INDUCED VOIDING IN NARROW ALUMINUM-BASED METALLIZATIONS [J].