650-A SELF-ALIGNED-GATE PSEUDOMORPHIC AL0.48IN0.52AS/GA0.20IN0.80AS HIGH ELECTRON-MOBILITY TRANSISTORS

We wish to report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency over 300 GHz. This work clearly demonstrates the potential of sub-0.1-mu-m gate-length HEMT's for near-future microwave and millimeter-wave applications.