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DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS

被引：101
作者：
CHAO, PC
SHUR, MS
TIBERIO, RC
DUH, KHG
SMITH, PM
BALLINGALL, JM
HO, P
JABRA, AA
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55416
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[3] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期
关键词：
D O I：
10.1109/16.19955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：461 / 473
页数：13
相关论文
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