MILLIMETER-WAVE PERFORMANCE OF ULTRASUBMICROMETER-GATE FIELD-EFFECT TRANSISTORS - A COMPARISON OF MODFET, MESFET, AND PBT STRUCTURES

被引：39

作者：

DAS, MB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期

关键词：

D O I：

10.1109/T-ED.1987.23103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1429 / 1440

页数：12

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