DESIGN CALCULATIONS FOR SUB-MICRON GATE-LENGTH ALGAAS/GAAS MODULATION-DOPED FET STRUCTURES USING CARRIER SATURATION VELOCITY CHARGE-CONTROL MODEL

被引：26

作者：

DAS, MB

ROSZAK, ML

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 10期

关键词：

D O I：

10.1016/0038-1101(85)90030-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：997 / 1005

页数：9

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