MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[2] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881

[3] MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 161 - 168

[4] HIYAMIZU S, 1982, SEMICONDUCTOR TECHNO, P258

[5] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[8] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[2] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881

[3] MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 161 - 168

[4] HIYAMIZU S, 1982, SEMICONDUCTOR TECHNO, P258

[5] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[8] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627