MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS

被引：10

作者：

HIYAMIZU, S

MIMURA, T

ISHIKAWA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：161 / 168

页数：8

相关论文

共 34 条

[1] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES
CHO, AY
CHENG, KY
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362
[2] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
LAVIRON, M
CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668
[3] DELESCLUSE P, UNPUB ELECTRON LETT
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] DINGLE R, UNPUB P SURF SCI
[6] DINGLE R, 1979, UNPUB YAMADA C 2, P30
[7] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
KOPP, W
MORKOC, H
[J]. ELECTRONICS LETTERS, 1981, 17 (13) : 442 - 444
[8] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI
EDEN, RC
WELCH, BM
ZUCCA, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426
[9] 30-PS JOSEPHSON CURRENT INJECTION LOGIC (CIL)
GHEEWALA, TR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (05) : 787 - 793
[10] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES
HIYAMIZU, S
NANBU, K
MIMURA, T
FUJII, T
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L378 - L380

← 1 2 3 4 →