USE OF MOLECULAR-BEAM EPITAXY IN RESEARCH AND DEVELOPMENT OF SELECTED HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES

被引：7

作者：

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：131 / 134

页数：4

共 11 条

[1] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET
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[2] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE
AWANO, Y
TOMIZAWA, K
HASHIZUME, N
KAWASHIMA, M
[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 133 - 135
[3] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
BARNARD, J
OHNO, H
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 174 - 176
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
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[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
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LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639
[7] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
AUCOIN, TR
ROSS, RL
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[8] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
OHNO, H
BARNARD, J
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (08): : 154 - 155
[9] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP
OLIVER, JD
EASTMAN, LF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 693 - 712
[10] RUCH JG, 1970, APPL PHYS, V41, P3843

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