CHANNEL-LENGTH EFFECTS IN QUARTER-MICROMETER GATE-LENGTH GAAS-MESFETS

被引：13

作者：

CHAO, PC ^{[1
]}

SMITH, PM ^{[1
]}

WANUGA, S ^{[1
]}

PERKINS, WH ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 09期

关键词：

D O I：

10.1109/EDL.1983.25750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：326 / 328

页数：3

共 9 条

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[2]

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[3]

CHAO PC, 1982, IEEE ELECTRON DEVICE, V3, P221

[4] A NUMERICAL APPROACH TO MODELING THE ULTRASHORT-GATE MESFET [J].

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PATTANAYAK, DN .

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[5]

HUANG C, 1982, DELETTR8002841 US AR

[6]

Mishra U., 1982, International Electron Devices Meeting. Technical Digest, P594

[7] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J].

MORKOC, H ;

BANDY, SG ;

SANKARAN, R ;

ANTYPAS, GA ;

BELL, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :619-627

[8]

REISER M, 1972, ELECTRON LETT, V8, P254, DOI 10.1049/el:19720188

[9]

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