CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：26

作者：

BAEK, J ^{[1
]}

SHUR, MS ^{[1
]}

DANIELS, RR ^{[1
]}

ARCH, DK ^{[1
]}

ABROKWAH, JK ^{[1
]}

TUFTE, ON ^{[1
]}

机构：

[1] HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1650 / 1657

页数：8

共 22 条

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