REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE

被引：41

作者：

CIRILLO, NC ^{[1
]}

SHUR, MS ^{[1
]}

VOLD, PJ ^{[1
]}

ABROKWAH, JK ^{[1
]}

TUFTE, ON ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期

关键词：

D O I：

10.1109/EDL.1985.26261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：645 / 647

页数：3

相关论文

共 8 条

[1] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS
HIRANO, M
OE, K
YANAGAWA, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L868 - L870
[2] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE
KATAYAMA, Y
MORIOKA, M
SAWADA, Y
UEYANAGI, K
MISHIMA, T
ONO, Y
USAGAWA, T
SHIRAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152
[3] COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS
KIEHL, RA
GOSSARD, AC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 521 - 523
[4] TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN GAAS-GA1-XALXAS HETEROJUNCTIONS
MENDEZ, EE
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1159 - 1161
[5] A NEW P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET EMPLOYING 2 DIMENSIONAL HOLE GAS
OE, K
HIRANO, M
ARAI, K
YANAGAWA, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (05): : L335 - L337
[6] A GAAS GATE HETEROJUNCTION FET
SOLOMON, PM
KNOEDLER, CM
WRIGHT, SL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381
[7] P-CHANNEL MODFETS USING GAALAS/GAAS TWO-DIMENSIONAL HOLE GAS
TIWARI, S
WANG, WI
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 333 - 335
[8] DOUBLE-IMPLANTED GAAS COMPLEMENTARY JFETS
ZULEEG, R
NOTTHOFF, JK
TROEGER, GL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) : 21 - 23