A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE

被引：21

作者：

KATAYAMA, Y

MORIOKA, M

SAWADA, Y

UEYANAGI, K

MISHIMA, T

ONO, Y

USAGAWA, T

SHIRAKI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L150 / L152

页数：3

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