ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET)

被引：21

作者：

DRUMMOND, TJ

KOPP, W

ARNOLD, D

FISCHER, R

MORKOC, H

ERICKSON, LP

PALMBERG, PW

机构：

[1] PERKIN ELMER,DIV PHYS ELECTR,EDEN PRAIRIE,MN 55344

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 23期

关键词：

D O I：

10.1049/el:19830670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：986 / 987

页数：2

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[7] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS
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