DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS

被引：24

作者：

LEE, K

SHUR, MS

DRUMMOND, TJ

SU, SL

LYONS, WG

FISCHER, R

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：186 / 189

页数：4

共 13 条

[1] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL [J].

DELAGEBEAUDEUF, D ;

LAVIRON, M ;

DELESCLUSE, P ;

TUNG, PN ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1982, 18 (02) :103-105

[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[3] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :449-454

[4] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

KEEVER, M ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1023-1028

[5] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[6] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J].

DRUMMOND, TJ ;

FISCHER, R ;

SU, SL ;

LYONS, WG ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :262-264

[7]

DRUMMOND TJ, 1982, IEDM TECH DIG, V25, P586

[8]

HIYAMIZU S, 1982, SEMICONDUCTOR TECHNO, P258

[9] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (15) :536-537

[10]

LEE K, J APPL PHYS

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