CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION

被引：18

作者：

DRUMMOND, TJ

FISCHER, R

SU, SL

LYONS, WG

MORKOC, H

LEE, K

SHUR, MS

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：262 / 264

页数：3

共 10 条

[1] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL
DELAGEBEAUDEUF, D
LAVIRON, M
DELESCLUSE, P
TUNG, PN
CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 103 - 105
[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[3] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
DRUMMOND, TJ
KOPP, W
MORKOC, H
KEEVER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279
[4] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[5] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
KEEVER, M
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028
[6] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
DRUMMOND, TJ
KOPP, W
THORNE, RE
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881
[7] DRUMMOND TJ, IEEE ELECTRON DEVICE
[8] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
LAVIRON, M
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
CHAPLART, J
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532
[9] Lee K. T., UNPUB
[10] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
MIMURA, T
HIYAMIZU, S
JOSHIN, K
HIKOSAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

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