THE PRESENT STATUS OF MODULATION-DOPED AND INSULATED-GATE FIELD-EFFECT TRANSISTORS IN III-V-SEMICONDUCTORS

被引：28

作者：

MIMURA, T

机构：

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90631-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：454 / 463

页数：10

共 32 条

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