THE PRESENT STATUS OF MODULATION-DOPED AND INSULATED-GATE FIELD-EFFECT TRANSISTORS IN III-V-SEMICONDUCTORS

被引：28

作者：

MIMURA, T

机构：

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90631-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：454 / 463

页数：10

共 32 条

[21] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

JOSHIN, K ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[22] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[23]

MIMURA T, 1980, IEEE T ELECTRON DEVI, V27, P2179

[24]

MIMURA T, 1981, JPN J APPL PHYS S, V20, P364

[25]

MIMURA T, UNPUB JAPAN J APPL P

[26] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

MORI, S ;

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[27]

PRICE PB, UNPUB

[28] INGAASP N-CHANNEL INVERSION-MODE MISFET [J].

SHINODA, Y ;

OKAMURA, M ;

YAMAGUCHI, E ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2301-2302

[29]

STORMER HL, 1981, APPL PHYS LETT, V38, P671

[30] OXIDATION OF GAAS1-XPX SURFACE BY OXYGEN PLASMA AND PROPERTIES OF OXIDE FILM [J].

SUGANO, T ;

MORI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :113-118

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