DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER

被引：66

作者：

PRUNIAUX, BR

ADAMS, AC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

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D O I：

10.1063/1.1661426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1980 / &

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