HETEROEPITAXIAL GROWTH OF SIXGE1-X ALLOYS BY THERMAL-DECOMPOSITION OF SIH4 AND GEH4

被引：9

作者：

OLESZEK, GM ^{[1
]}

ANDERSON, RL ^{[1
]}

机构：

[1] SYRACUSE UNIV,DEPT ELECT & COMP ENGN,MICROELECTR LAB,SYRACUSE,NY 13210

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 04期

关键词：

D O I：

10.1149/1.2403499

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：554 / 559

页数：6

共 29 条

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[10]

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