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FABRICATION OF GAAS QUANTUM-WIRE STRUCTURES BY HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY

被引：18
作者：
SUGAYA, T
KANEKO, M
OKADA, Y
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12B期
关键词：
HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY; GAAS; QUANTUM WIRE; PHOTOLUMINESCENCE; POLARIZATION ANISOTROPY;
D O I：
10.1143/JJAP.32.L1834
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs Quantum wire structures have been fabricated by hydrogen-assisted molecular beam epitaxy on substrates having V-shaped grooves, the side walls of which consist of (111)A. The growth rate of GaAs on (111)A was significantly decreased by atomic hydrogen irradiation, while that on (001) was increased. The large difference in the growth rate between (001) and (111)A has been uniquely utilized for the fabrication of quantum wires. The existence of a quantum energy level in the quantum wire structures has been confirmed by photoluminescence (PL) measurement. The PL spectra showed a clear polarization dependence.
引用
收藏
页码：L1834 / L1836
页数：3
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