LOW-TEMPERATURE CLEANING OF GAAS SUBSTRATE BY ATOMIC-HYDROGEN IRRADIATION

被引：159

作者：

SUGAYA, T

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Ibaraki, 305, Tsukuba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期

关键词：

LOW-TEMPERATURE CLEANING; GAAS; ATOMIC HYDROGEN; RHEED; AES;

D O I：

10.1143/JJAP.30.L402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation has been demonstrated. Atomic hydrogen was provided by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500-degrees-C tungsten filament. Auger electron spectroscopy showed that carbon was removed at 200-degrees-C and oxygen was removed at 400-degrees-C by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.

引用

页码：L402 / L404

页数：3

共 6 条

[1] CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR-BEAM EPITAXY
KAWAI, NJ
WOOD, CEC
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6208 - 6213
[2] KINETICS OF GENERATION OF ATOMIC-HYDROGEN AND ITS ADSORPTION ON SI(110)
SAKURAI, T
CARDILLO, MJ
HAGSTRUM, HD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 397 - 399
[3] INCIDENCE ANGLE EFFECT OF A HYDROGEN PLASMA BEAM FOR THE CLEANING OF SEMICONDUCTOR SURFACES
SUEMUNE, I
KUNITSUGU, Y
KAN, Y
YAMANISHI, M
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (08) : 760 - 762
[4] CLEANING OF MBE GAAS SUBSTRATES BY HYDROGEN RADICAL BEAM IRRADIATION
TAKAMORI, A
SUGATA, S
ASAKAWA, K
MIYAUCHI, E
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L142 - L144
[5] TAKAMORI A, 1984, JPN J APPL PHYS, V24, pL414
[6] TAKASUGI H, 1985, 17TH C SOL STAT DEV, P205

← 1 →