INCIDENCE ANGLE EFFECT OF A HYDROGEN PLASMA BEAM FOR THE CLEANING OF SEMICONDUCTOR SURFACES

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 677 - 680

[2] THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2390 - 2395

[3] DOBSON PJ, 1982, SURF SCI, V119, pL339, DOI 10.1016/0039-6028(82)90177-7

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] HARPER JME, 1988, MATERIAL RES SOC S P, V128, P269

[6] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687

[7] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212

[8] NANISHI Y, 1987, 87 I EL INF COMM ENG, P77

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V COMPOUND SEMICONDUCTOR IN THE PRESENCE OF A LOW-ENERGY ION-BEAM - A MONTE-CARLO SIMULATION STUDY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 837 - 839

[10] OHTA K, 1989, J CRYST GROWTH, P95

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 677 - 680

[2] THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2390 - 2395

[3] DOBSON PJ, 1982, SURF SCI, V119, pL339, DOI 10.1016/0039-6028(82)90177-7

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] HARPER JME, 1988, MATERIAL RES SOC S P, V128, P269

[6] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687

[7] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212

[8] NANISHI Y, 1987, 87 I EL INF COMM ENG, P77

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V COMPOUND SEMICONDUCTOR IN THE PRESENCE OF A LOW-ENERGY ION-BEAM - A MONTE-CARLO SIMULATION STUDY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 837 - 839

[10] OHTA K, 1989, J CRYST GROWTH, P95