PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE

被引：40

作者：

HORIKOSHI, Y

KAWASHIMA, M

YAMAGUCHI, H

机构：

来源：

关键词：

D O I：

10.1063/1.97768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1686 / 1687

页数：2

共 7 条

[1] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
NEAVE, JH
DOBSON, PJ
JOYCE, BA
ZHANG, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102
[3] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[4] SIMULTANEOUS OBSERVATION OF RHEED OSCILLATION DURING GAAS MBE GROWTH WITH MODULATED ELECTRON-BEAM
SUGIURA, H
KAWASHIMA, M
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (06): : 847 - 851
[5] TANAKA M, 1985, 2ND P INT C MOD SEM, P310
[6] TU CW, 1986, 4TH P INT C MOL BEAM, P159
[7] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746