SIMULTANEOUS OBSERVATION OF RHEED OSCILLATION DURING GAAS MBE GROWTH WITH MODULATED ELECTRON-BEAM

被引：4

作者：

SUGIURA, H

KAWASHIMA, M

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 06期

关键词：

D O I：

10.1143/JJAP.25.847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：847 / 851

页数：5

共 8 条

[1] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS
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DEMIGUEL, JL
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L478 - L480
[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
[4] RAMAN-SCATTERING FROM GAAS-ALAS MONOLAYER-CONTROLLED SUPERLATTICES
NAKAYAMA, M
KUBOTA, K
KATO, H
CHIKA, S
SANO, N
[J]. SOLID STATE COMMUNICATIONS, 1985, 53 (05) : 493 - 495
[5] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[6] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION
SAKAMOTO, T
FUNABASHI, H
OHTA, K
NAKAGAWA, T
KAWAI, NJ
KOJIMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L657 - L659
[7] MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS
SANO, N
KATO, H
NAKAYAMA, M
CHIKA, S
TERAUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L640 - L641
[8] THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS
VANHOVE, JM
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 563 - 567

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