DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD

被引：53

作者：

ASAKAWA, K

SUGATA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573831

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：677 / 680

页数：4

共 9 条

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CHANG, CC ;

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[4]

MIYAZAKI S, 1984, 5TH INT C SOL STAT D, P447

[5] EFFECTS OF DRY ETCHING ON GAAS [J].

PANG, SW ;

LINCOLN, GA ;

MCCLELLAND, RW ;

DEGRAFF, PD ;

GEIS, MW ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1334-1337

[6]

SAKAMOTO Y, 1979, 8TH P S ENG PROBL FU, P673

[7]

SUGATA S, 1985, 1985 P S DRY PROC, P144

[8]

SUGATA S, 1985, 7TH P INT S PLASM CH, P977

[9]

WEAST RC, 1980, CRC HDB CHEM PHYSICS, pB73

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