EFFECTS OF DRY ETCHING ON GAAS

被引：119

作者：

PANG, SW

LINCOLN, GA

MCCLELLAND, RW

DEGRAFF, PD

GEIS, MW

PIACENTINI, WJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1334 / 1337

页数：4

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