A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES

被引：130

作者：

FONASH, SJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

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D O I：

10.1063/1.332251

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：1966 / 1975

页数：10

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[1] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES
ASHOK, S
BORREGO, JM
GUTMANN, RJ
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
[4] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[5] OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3597 - 3602
[6] OCONNOR P, 1982, JUN DEV RES C FT COL
[7] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[8] A STUDY OF PD-SI MIS SCHOTTKY-BARRIER DIODE HYDROGEN DETECTOR
RUTHS, PF
ASHOK, S
FONASH, SJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1003 - 1009
[9] EXCESS CAPACITANCE AND NON-IDEAL SCHOTTKY BARRIERS ON GAAS
VASUDEV, PK
MATTES, BL
PIETRAS, E
BUBE, RH
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 557 - 559