EXCESS CAPACITANCE AND NON-IDEAL SCHOTTKY BARRIERS ON GAAS

被引：67

作者：

VASUDEV, PK ^{[1
]}

MATTES, BL ^{[1
]}

PIETRAS, E ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 07期

关键词：

D O I：

10.1016/0038-1101(76)90052-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：557 / 559

页数：3

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