GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS

被引：78

作者：

ADAMS, AC ^{[1
]}

PRUNIAUX, BR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期

关键词：

D O I：

10.1149/1.2403467

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：408 / 414

页数：7

共 25 条

[1]

ADAMS AC, 1970, MAY EL SOC SPRING M

[2] MEASURING SURFACE CLEANLINESS OF N-GAAS BY ELLIPSOMETRY [J].

ALFANO, RR .

SOLID-STATE ELECTRONICS, 1968, 11 (08) :789-&

[3] ELLIPSOMETRY WITH NON-IDEAL COMPENSATORS [J].

ARCHER, RJ ;

SHANK, CV .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1967, 57 (02) :191-&

[4] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[5] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[6]

BORN M, 1965, PRINCIPLES OPTICS, P614

[7] EFFECT OF THIN SURFACE FILM ON ELLIPSOMETRIC DETERMINATION OF OPTICAL CONSTANTS [J].

BURGE, DK ;

BENNETT, HE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (12) :1428-&

[8] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[9] FORTRAN PROGRAM FOR INTERPRETATION OF ELLIPSOMETER MEASUREMENTS [J].

COX, RE .

APPLIED OPTICS, 1964, 3 (10) :1188-&

[10] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS [J].

DELLOCA, CJ ;

YAN, G ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :89-&

← 1 2 3 →