DIRECTIONAL OXYGEN-ION-BEAM ETCHING OF CARBONACEOUS MATERIALS

[1] COMPARISON OF PROPERTIES OF DIFFERENT MATERIALS USED AS MASKS FOR ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1340 - 1343

[2] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J]. APPLIED PHYSICS LETTERS, 1978, 32 (02) : 112 - 114

[3] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619

[4] GRAPHO-EPITAXY OF SILICON ON FUSED-SILICA USING SURFACE MICROPATTERNS AND LASER CRYSTALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1640 - 1643

[5] FABRICATION OF DEEP SQUARE-WAVE STRUCTURES WITH MICRON DIMENSIONS BY REACTIVE SPUTTER ETCHING [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 163 - 165

[6] OPTIMIZATION OF AN ELECTRON-BOMBARDMENT ION-SOURCE FOR ION MACHINING APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1344 - 1347

[7] ARGON PLASMA BRIDGE NEUTRALIZER OPERATION WITH A 10-CM-BEAM-DIAMETER ION ETCHING SOURCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 1093 - 1095

[8] FABRICATION TECHNIQUES FOR SURFACE-ACOUSTIC-WAVE AND THIN-FILM OPTICAL DEVICES [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (10) : 1361 - 1387

[9] SMITH HI, 1976, ETCHING PATTERN DEFI, P133

[1] COMPARISON OF PROPERTIES OF DIFFERENT MATERIALS USED AS MASKS FOR ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1340 - 1343

[2] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J]. APPLIED PHYSICS LETTERS, 1978, 32 (02) : 112 - 114

[3] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619

[4] GRAPHO-EPITAXY OF SILICON ON FUSED-SILICA USING SURFACE MICROPATTERNS AND LASER CRYSTALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1640 - 1643

[5] FABRICATION OF DEEP SQUARE-WAVE STRUCTURES WITH MICRON DIMENSIONS BY REACTIVE SPUTTER ETCHING [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 163 - 165

[6] OPTIMIZATION OF AN ELECTRON-BOMBARDMENT ION-SOURCE FOR ION MACHINING APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1344 - 1347

[7] ARGON PLASMA BRIDGE NEUTRALIZER OPERATION WITH A 10-CM-BEAM-DIAMETER ION ETCHING SOURCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 1093 - 1095

[8] FABRICATION TECHNIQUES FOR SURFACE-ACOUSTIC-WAVE AND THIN-FILM OPTICAL DEVICES [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (10) : 1361 - 1387

[9] SMITH HI, 1976, ETCHING PATTERN DEFI, P133