TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS

被引：183

作者：

HARPER, JME ^{[1
]}

CUOMO, JJ ^{[1
]}

KAUFMAN, HR ^{[1
]}

机构：

[1] COLORADO STATE UNIV, DEPT PHYS, FT COLLINS, CO 80523 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1116/1.571820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：737 / 756

页数：20

共 182 条

[1] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .2. PB+ ION-BEAM DEPOSITION AND ANALYSIS OF DEPOSITS [J].

AMANO, J ;

LAWSON, RPW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (03) :831-835

[2]

ANDERSON HH, 1981, SPUTTERING PARTICLE, V1

[3] THE EFFECT OF ION-IMPLANTATION ON AQUEOUS CORROSION [J].

ASHWORTH, V ;

PROCTER, RPM ;

GRANT, WA .

THIN SOLID FILMS, 1980, 73 (01) :179-188

[4] AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

STUDNA, AA .

SURFACE SCIENCE, 1980, 96 (1-3) :294-306

[5] ION INTERACTION WITH SOLIDS - SURFACE TEXTURING, SOME BULK EFFECTS, AND THEIR POSSIBLE APPLICATIONS [J].

AUCIELLO, O .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :841-867

[6]

BANKS BA, 1981, AIAA810669 PAP

[7]

BARKER RA, UNPUB APPL PHYS LETT

[8] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[9] AN ANALYTICAL FORMULA AND IMPORTANT PARAMETERS FOR LOW-ENERGY ION SPUTTERING [J].

BOHDANSKY, J ;

ROTH, J ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2861-2865

[10]

BOLLINGER D, 1980, SOLID STATE TECHNOL, V23, P97

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