GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM

被引：87

作者：

ASAKAWA, K

SUGATA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：402 / 405

页数：4

共 18 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655
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[7] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE
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[8] ION-BEAM ETCHING
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[9] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 34 - 37
[10] CRYSTALLOGRAPHIC ETCHING OF GAAS WITH BROMINE AND CHLORINE PLASMAS
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DONNELLY, VM
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5974 - 5981

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