GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM

被引：48

作者：

ASAKAWA, K

SUGATA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.L653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L653 / L655

页数：3

共 7 条

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[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
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IGA, K
MILLER, BI
RENTSCHLER, JA
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[4] ION-BEAM ETCHING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35
[5] NAGASAKA H, 1982, P S DRY PROCESS, P79
[6] SEMURA S, 1982, P S DRY PROCESS, P68
[7] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES
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MAYER, TM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16