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GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM
被引:48
作者
:
ASAKAWA, K
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, K
SUGATA, S
论文数:
0
引用数:
0
h-index:
0
SUGATA, S
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1983年
/ 22卷
/ 10期
关键词
:
D O I
:
10.1143/JJAP.22.L653
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L653 / L655
页数:3
相关论文
共 7 条
[1]
SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARKER, RA
MAYER, TM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MAYER, TM
BURTON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BURTON, RH
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(07)
: 583
-
586
[2]
ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
COBURN, JW
WINTERS, HF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
WINTERS, HF
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3189
-
3196
[3]
GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
论文数:
0
引用数:
0
h-index:
0
COLDREN, LA
IGA, K
论文数:
0
引用数:
0
h-index:
0
IGA, K
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
RENTSCHLER, JA
论文数:
0
引用数:
0
h-index:
0
RENTSCHLER, JA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 681
-
683
[4]
ION-BEAM ETCHING
GLOERSEN, PG
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
GLOERSEN, PG
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975,
12
(01):
: 28
-
35
[5]
NAGASAKA H, 1982, P S DRY PROCESS, P79
[6]
SEMURA S, 1982, P S DRY PROCESS, P68
[7]
PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES
SMOLINSKY, G
论文数:
0
引用数:
0
h-index:
0
SMOLINSKY, G
CHANG, RP
论文数:
0
引用数:
0
h-index:
0
CHANG, RP
MAYER, TM
论文数:
0
引用数:
0
h-index:
0
MAYER, TM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981,
18
(01):
: 12
-
16
←
1
→
共 7 条
[1]
SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARKER, RA
MAYER, TM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MAYER, TM
BURTON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BURTON, RH
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(07)
: 583
-
586
[2]
ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
COBURN, JW
WINTERS, HF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Laboratory, San Jose
WINTERS, HF
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3189
-
3196
[3]
GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
论文数:
0
引用数:
0
h-index:
0
COLDREN, LA
IGA, K
论文数:
0
引用数:
0
h-index:
0
IGA, K
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
RENTSCHLER, JA
论文数:
0
引用数:
0
h-index:
0
RENTSCHLER, JA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 681
-
683
[4]
ION-BEAM ETCHING
GLOERSEN, PG
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
GLOERSEN, PG
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975,
12
(01):
: 28
-
35
[5]
NAGASAKA H, 1982, P S DRY PROCESS, P79
[6]
SEMURA S, 1982, P S DRY PROCESS, P68
[7]
PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES
SMOLINSKY, G
论文数:
0
引用数:
0
h-index:
0
SMOLINSKY, G
CHANG, RP
论文数:
0
引用数:
0
h-index:
0
CHANG, RP
MAYER, TM
论文数:
0
引用数:
0
h-index:
0
MAYER, TM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981,
18
(01):
: 12
-
16
←
1
→