PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES

被引：77

作者：

SMOLINSKY, G

CHANG, RP

MAYER, TM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 01期

关键词：

D O I：

10.1116/1.570690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：12 / 16

页数：5

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[2] HOWARD RE, 1980, JAN TOP M INT GUID W
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[4] THE EFFECT OF ADDED ACETYLENE ON THE RF DISCHARGE CHEMISTRY OF C2F6 - A MECHANISTIC MODEL FOR FLUOROCARBON PLASMAS
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[5] IONIC AND NEUTRAL SPECIES DETECTED BY MASS-SPECTROMETRY IN A RADIO-FREQUENCY DISCHARGE OF TETRAFLUOROETHYLENE
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SMOLINSKY, G
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1977, 81 (26) : 2605 - 2609