CHEMICALLY ASSISTED ION-BEAM ETCHING FOR SUB-MICRON STRUCTURES

被引：27

作者：

CHINN, JD ^{[1
]}

ADESIDA, I ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1028 / 1032

页数：5

共 18 条

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[2]

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[4]

BURTON RH, 1981, 3RD JECS S PLASM ETC

[5]

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[6] PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION-BEAM ETCHING [J].

CHINN, JD ;

ADESIDA, I ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :185-187

[7] CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO [J].

CHINN, JD ;

FERNANDEZ, A ;

ADESIDA, I ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :701-704

[8]

DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P181

[9]

FALCONER WE, 1977, J CHEM PHYS, V60, P5335

[10] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J].

GEIS, MW ;

LINCOLN, GA ;

EFREMOW, N ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1390-1393

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