CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO

被引：49

作者：

CHINN, JD ^{[1
]}

FERNANDEZ, A ^{[1
]}

ADESIDA, I ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571981

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：701 / 704

页数：4

共 20 条

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
MAYER, TM
BURTON, RH
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586
[2] BOSH MA, 1981, APPL PHYS LETT, V38, P264
[3] BROWN HL, 1978, SOLID STATE TECHNOL, V21, P35
[4] BURTON RH, 1981, 3RD JECS S PLASM ETC
[5] ION-SURFACE INTERACTIONS IN PLASMA ETCHING
COBURN, JW
WINTERS, HF
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540
[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
RENTSCHLER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[7] DASARO LA, COMMUNICATION
[8] DONNELLY VM, 1981, 3RD JECS S PLASM ETC
[9] DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P181
[10] FOX TT, 1981, J VAC SCI TECHNOL, V19, P1397